Computational study of tunneling transistor based on graphene nanoribbon.

Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method" (2014).

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

Non-Linear Temperature Dependence in Graphene Nanoribbon Tunneling Transistors

It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and nonlinear temperature dependence. Furthermore, the nature of this non-linearity changes as a functi...